dm c1030ufdbq document number: ds 38242 rev. 1 - 2 1 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq complementary pair enhancement mode mosfet product summary device b v dss r ds(on) max i d max t a = +25c q1 n - channel 12 v 34 m ? @ v gs = 4.5 v 5. 1 a 40 m ? @ v gs = 2 .5v 4.7 a 50 m ? @ v gs = 1 . 8 v 4. 2 a 70 m ? @ v gs = 1 .5v 3. 6 a q2 p - channel - 12 59 m ? @ v gs = - 4.5 v - 3. 9 a 81 m ? @ v gs = - 2 .5 v - 3. 3 a 115 m ? @ v gs = - 1.8 v - 2.8 a 215 m ? @ v gs = - 1 .5 v - 2. 0 a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in: ? load switch ? power management functions ? portable power adaptors features ? low on - resistance ? low input capacitance ? low profile, 0. 6 mm max height ? esd p rotected g ate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: u - dfn2020 - 6 (type b) ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivi ty: level 1 per j - std - 020 ? terminals: finish nipdau over copper l eadframe. solderable per mil - std - 202, method 208 ? terminals connections: see diagram below ? weight: 0.0065 grams ( a pproximate) ordering information (note 5 ) part number case packaging dmc1 030 ufdb q - 7 u - dfn2020 - 6 (type b) 3000/tape & reel dmc1 030 ufd b q - 13 u - dfn2020 - 6 (type b) 10 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information date code key year 2015 2016 2017 2018 201 9 20 20 20 21 code c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view internal schematic d 3 = product type marking code ym = date code marking y = year (ex: d = 20 1 6 ) m = month (ex: 9 = september) n - channel mosfet p - channel mosfet u - dfn2020 - 6 (type b) d d1 s 1 g 1 d2 s2 g2 d1 d2 pin1 esd protected d 3 y m d1 s1 g1 g ate protection diode d2 s2 g2 g ate protection diode e4
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 2 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol q1 n - channel q2 p - channel unit drain - source voltage v dss 12 - 12 v gate - source voltage v gss 8 8 v continuous drain current (note 6 ) n - channel : v gs = 4.5 v p - channel : v gs = - 4.5 v steady state t a = + 25 c t a = + 70 c i d 5. 1 4. 1 - 3. 9 - 3. 1 a t < 5 s t a = + 25 c t a = + 70 c i d 6.6 5. 3 - 5.0 - 4.0 a maximum continuous body diode f orward current (note 6 ) i s 2 - 1 .7 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 35 - 2 5 a avalanche current ( l = 0.1mh ) i a s 5 - 5 a avalanche energy ( l = 0.1mh ) e a s 4 4 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) steady state p d 1.36 w t < 5 s 1.89 thermal resistance, junction to ambient (note 6 ) steady state r ? ja 92 c/w t < 5 s 66 thermal resistance, junction to case (note 6 ) r ? j c 1 8 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250a j = + 25c i dss 1.0 a ds = 12 v, v gs = 0v gate - source leakage i gss 10 a gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 0.4 ds = v gs , i d = 250 a ds(on) 17 34 m gs = 4.5 v, i d = 4.6 a 20 40 v gs = 2 .5 v, i d = 4.2 a 24 50 v gs = 1.8 v, i d = 3.8 a 28 70 v gs = 1 .5 v, i d = 1.5 a diode forward voltage v sd 0. 7 1. 2 v v gs = 0 v, i s = 4.8 a dynamic characteristics (note 8 ) input capacitance c iss 1003 pf v ds = 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss 132 pf reverse transfer capacitance c rss 115 pf gate resistance r g 11.3 ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g 12.2 nc v ds = 10 v, i d = 6.8 a total gate charge ( v gs = 8 v ) 23.1 nc gate - source charge q gs 1.3 nc gate - drain charge q gd 1.5 nc turn - on delay time t d( on ) 4.4 ns v dd = 6 v, v gs = 4.5 v, r l = 1.1 , r g = 1 r 7.4 ns turn - off delay time t d( off ) 18.8 ns turn - off fall time t f 4.9 ns body diode reverse recovery time t rr 7.6 n s i s = 5.4a , di /d t = 1 00a/ rr 0.9 n c i s = 5.4a , di /d t = 1 00a/ notes: 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 3 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq i d , drain current (a) figure 4 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.00 0.01 0.02 0.03 0.04 0 2 4 6 8 10 12 14 16 18 20 t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs r ds(on) , drain - source on - resistance ( ? gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a i d , drain current (a) v gs = 1.8v v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 v = 0.9v gs v = 1.0v gs v = 2.0v gs v = 1.8v gs vv gs = 1.5 v = 4.0v gs v = 4.5v gs v = 3.0v gs v = 3.5v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 18 20 v = 2.5v gs v = 4.5v gs v = 18v gs v = 1.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = v i = 3.0a gs d 1.8 v = v i = 5.0a gs d 2.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 v = v i = 3.0a gs d 1.8 v = v i = 5.0a gs d 2.5
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 4 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq v , drain - source voltage (v) figure 11 soa safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c v = 4.5v single pulse j(max) a gs dut on 1 * mrp board i d , drain current (a) v , source - drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 85c a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 150c a t = - 55c a t = 25c a i s , source current (a) t , junction temperature ( o c) figure 7 gate threshold variation vs. junction temperature j v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v gs(th) , gate threshold voltage (v) v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 10 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 0 5 10 15 20 25 v = 10v i = a ds d 6.8
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 5 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq electrical characteristics q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 12 v v gs = 0v, i d = - 250a j = + 25c i dss - 1.0 a ds = - 12 v, v gs = 0v gate - source leakage i gss 10 a gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) - 0.4 ds = v gs , i d = - 250 a ds(on) 37 59 m gs = - 4.5 v, i d = - 3.6 a 48 81 v gs = - 2 .5 v, i d = - 3.1 a 69 115 v gs = - 1.8 v, i d = - 2.6 a 88 215 v gs = - 1 .5 v, i d = - 0.5 a diode forward voltage v sd - 0. 7 - 1. 2 v v gs = 0 v, i s = - 3.7 a dynamic characteristics (note 8 ) input capacitance c iss 1028 pf v ds = - 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss 285 pf reverse transfer capacitance c rss 254 pf gate resistance r g 19.6 ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g 13 nc v ds = - 10 v, i d = - 4.7 a total gate charge ( v gs = - 8 v ) 20.8 nc gate - source charge q gs 1.8 nc gate - drain charge q gd 4.5 nc turn - on delay time t d( on ) 5.6 ns v dd = - 6 v, v gs = - 4.5 v, r l = 1.6 , r g = 1 r 12.8 ns turn - off delay time t d( off ) 30.7 ns turn - off fall time t f 25.4 ns body diode reverse recovery time t rr 31.6 n s i s = - 3.6a , di /d t = 1 00a/ rr 7.8 n c i s = - 3.6a , di /d t = 1 00a/ notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing. -v , drain -source voltage (v) figure 12 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 v = -0.9v gs v = -1.0v gs v = -3.5v gs v = -4.5v gs v = -4.0v gs v = -1.5v gs v = -1.8v gs v = -2.0v gs v = -3.0v gs -v , gate-source voltage (v) gs figure 13 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 6 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 14 typical on - resistance vs. drain current and gate voltage v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v - v , source - drain voltage (v) figure 19 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = - 55c a t = 25c a - i s , source current (a) t , ambient temperature (c) figure 18 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 - i =1ma d - i = 250 a d v gs(th) , gate threshold voltage (v) -i , drain source current (a) figure 15 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 12 14 16 18 20 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs t , junction temperature ( c) j ? figure 16 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -1.8v i = -3.0a gs d v = -2.5v i = -5.0a gs d t , junction temperature ( c) j ? figure 17 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 -50 -25 0 25 50 75 100 125 150 v = -2.5v i = a gs d -5.0 v = v i = a gs d -1.8 -3.0
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 7 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq t1, pulse duration times (sec) figure 23 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.0 05 single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.9 r(t), transient thermal resistance r ja (t) = r(t)* r ja r ja = 159 o c/w duty cycle, d = t1/t2 - v , drain - source voltage (v) figure 22 soa safe operation area ds - i , d r a i n c u r r e n t ( a ) d r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 100 t = 150c t = 25c v = - 4.5v single pulse j(max) a gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w - i d , drain current (a) c , j u n c t i o n c a p a c i t a n c e ( p f ) t -v , drain-source voltage (v) figure 20 typical junction capacitance ds 10 100 1000 10000 0 2 4 6 8 10 12 f = 1mhz c oss c rss c iss q , total gate charge (nc) figure 21 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 5 10 15 20 25 v = -10v i = -4.7a ds d
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 8 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq package outline dimensions please see ap02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. u - dfn2020 - 6 (type b) u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0.00 0.05 0.02 a3 - - 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d2 0.50 0.70 0.60 e - - 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 k - - 0.45 l 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. u - dfn2020 - 6 (type b) dimensions value (in mm) c 0.650 g 0.150 g1 0.450 x 0.350 x1 0.600 x2 1.650 y 0.500 y1 1.000 y2 2.300 d2 r0.150 a a1 a3 seating plane e d2 e2 b (pin #1 id) e l d k z1 z1 z x2 c y2 y1(2x) g1 x y g x1(2x)
dm c1030ufdbq document number: ds 38242 rev. 1 - 2 9 of 9 www.diodes.com january 2016 ? diodes incorporated dm c1030ufdbq important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of an y jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated doe s not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized applicatio n, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintende d or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or for eign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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